Novel Write-Enhanced and Highly Reliable RHPD-12T SRAM Cells for Space Applications

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Project Code :TVPGBE57

Objective

For enhancing the reliability and operation speed for space applications, designed a novel radiation hardened by polar design (RHPD) 12T SRAM cell. The proposed cell has better circuit performance at high frequency and low power supply voltage

Abstract

In this project, a novel Radiation Hardened by Polar Design (RHPD) 12T SRAM cell to enhance the reliability and operation speed for space applications is proposed. Simulation results in 45nm CMOS show that the proposed RHPD-12T cell can tolerate all single-node upsets. The proposed RHPD-12T has the minimum write failure probability compared with existing SRAM cells. The proposed SRAM design is implemented using 45nm technology in Cadence Virtuoso.

Keywords: Radiation-Hardened-By-Design (RHBD), Single-node Upset, SRAM. 

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