Novel Write-Enhanced and Highly Reliable RHPD-12T SRAM Cells for Space Applications

Also Available Domains Core Memories|Cadence EDA|Tanner EDA

Project Code :TVMABE55

Objective

For enhancing the reliability and operation speed for space applications, designed a novel radiation hardened by polar design (RHPD) 12T SRAM cell. The proposed cell has better circuit performance at high frequency and low power supply voltage

Abstract

In this project, a novel Radiation Hardened by Polar Design (RHPD) 12T SRAM cell to enhance the reliability and operation speed for space applications is proposed. Simulation results in 45nm CMOS show that the proposed RHPD-12T cell can tolerate all single-node upsets. The proposed RHPD-12T has the minimum write failure probability compared with existing SRAM cells. The proposed SRAM design is implemented using 45nm technology in Cadence Virtuoso.

Keywords: Radiation-Hardened-By-Design (RHBD), Single-node Upset, SRAM.

NOTE: Without the concern of our team, please don't submit to the college. This Abstract varies based on student requirements.

Block Diagram

Specifications

Software Requirements:

Xilinx ISE Tool
HDL: Verilog

Hardware Requirements:

Microsoft® Windows XP
Intel® Pentium® 4 processor or Pentium 4 equivalent with SSE support
512 MB RAM
100 MB of available disk space

Demo Video

Front End Domains

Cadence EDA
Finite State Machines
Arithmetic Core
DSP Core
Communications
Nano Technology
Testing

Back End Domains

Nano Technology
Cadence EDA
Low Power VLSI
Core Memories
Transistor Logic

Tools

FPGA
H-Spice
Cadence EDA
QCA
Xilinx Vivado
Xilinx ISE
Tanner EDA
LT-Spice

Others

Matlab Interfacing

H-Spice

LT-Spice