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For enhancing the reliability and operation speed for space applications, designed a novel radiation hardened by polar design (RHPD) 12T SRAM cell. The proposed cell has better circuit performance at high frequency and low power supply voltage
In this project, a novel Radiation Hardened by Polar Design (RHPD) 12T SRAM cell to enhance the reliability and operation speed for space applications is proposed. Simulation results in 45nm CMOS show that the proposed RHPD-12T cell can tolerate all single-node upsets. The proposed RHPD-12T has the minimum write failure probability compared with existing SRAM cells.
Keywords: Radiation-Hardened-By-Design (RHBD), Single-node Upset, SRAM.
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