Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM

Resistively switching, non-volatile memory devices facilitate new logic paradigms by combining storage and processing elements. Several non-stateful concepts such as Scouting or Majority have been proposed for the implementation of logic Computing-in-Memory based on active 1T-1R crossbar arrays. The operation reliability of these concepts critically depends on the accurate readout current distinction. In this paper, we perform experimental tests for several non-stateful logic gates based on transistor-coupled resistive devices (further denoted as 1T-1R) using HfOx as the insulating material. The focus of our investigation lies on the operation reliability and the influence of operation parameters. Based on our experimental findings, we conduct a thorough statistical analysis, assessing the reliability and outline the limitations of non-stateful 1T-1R logic functions for Computing-in-Memory. Index Terms— ReRAM, 1T-1R logic, computing-in-memory, majority, scouting