Design and performance analysis of 8-bit ALU for Nano- Processor design for low area, Low power and minimum delay using 32nm CMOS technology

We present a 10-bit, 50 MS/s radiation-tolerant successive-approximation-register (SAR) ADC implemented in a 65-nm CMOS process, optimized for space and high-energy physics applications. The converter employs a split coarse/fine capacitive DAC: a coarse thermometer-coded MSB block for improved monotonicity and reduced switching energy, and a fine binary-weighted LSB block to minimize capacitance and area. SAR timing is implemented in an asynchronous, event-driven controller to achieve a 50 MS/s conversion rate with a 1-cycle coarse search followed by a background fine calibration loop that cancels comparator offset and capacitor mismatch. Radiation hardening is achieved through mixed mitigation techniques: layout hardening (enclosed-layout transistors, guard rings), redundancy and glitch-tolerant finite-state logic for the SAR control, SEU-robust comparators and registers, and TID-resilient biasing. Post-layout simulations including mismatch and typical radiation-induced parameter shifts indicate an SNDR ≈ 59–60 dB (ENOB ≈ 9.5–9.7 bits), SFDR > 70 dB, DNL/INL < ±0.5 LSB after calibration, and a core power of order single-digit milliwatts at 1.0–1.2 V. The design occupies a compact core area and demonstrates robust operation across supply, temperature and radiation stress scenarios, making it suitable for moderate-resolution, medium-speed data acquisition in radiation-harsh environments.