Also Available Domains Cadence EDA
The main objective of this paper is to implement LP10TSRAM in order to achieve lesser power dissipation.
This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross-coupled structure consisting standard inverter with a stacked transistor and Schmitt-trigger inverter with a double-length pull-up transistor. This along with the read path separated from true internal storage nodes eliminates the read-disturbance. Furthermore, it performs its write operation in pseudo differential form through write bit line and control signal with a write-assist technique. This entire design was simulated using tanner 16nm CMOS Technology.
NOTE: Without the concern of our team, please don't submit to the college. This Abstract varies based on student requirements.

Software Requirements:
· Tanner
· Technology files: 16nm
Hardware Requirements:
· Microsoft® Windows XP
· Intel® Pentium® 4 processor or Pentium 4 equivalent with SSE support
· 512 MB RAM
100 MB of available disk space