A Memristor-Based In-Memory Adaptive Approximate Adder

Project Code :TVMABE789

Objective

This work presents the design of a memristor-based in-memory adaptive approximate adder aimed at achieving high energy efficiency and reduced computation latency for modern computing applications. With the limitations of conventional CMOS architectures, particularly the von Neumann bottleneck caused by separate memory and processing units, in-memory computing using memristors has emerged as a promising solution

Abstract

This work presents the design of a memristor-based in-memory adaptive approximate adder aimed at achieving high energy efficiency and reduced computation latency for modern computing applications. With the limitations of conventional CMOS architectures, particularly the von Neumann bottleneck caused by separate memory and processing units, in-memory computing using memristors has emerged as a promising solution. Memristors provide non-volatile storage along with logic computation capability, enabling data processing directly within memory arrays.In the proposed design, an adaptive approximate adder is implemented using memristive devices, where approximation techniques are applied to reduce circuit complexity and power consumption while maintaining acceptable computational accuracy. The level of approximation is dynamically controlled based on input conditions, allowing a trade-off between accuracy and efficiency. The architecture minimizes data movement, reduces delay, and improves overall system throughput. Simulation results indicate that the proposed design achieves significant improvements in power consumption, speed, and area efficiency compared to conventional exact adders. This makes it highly suitable for applications in error-tolerant systems such as multimedia processing, machine learning, and IoT devices.

 

Keywords

 

Memristor, In-Memory Computing, Approximate Adder, Low Power, Adaptive Design, Non-Volatile Memory, Nanoelectronics

NOTE: Without the concern of our team, please don't submit to the college. This Abstract varies based on student requirements.

Block Diagram

Specifications

Β·         Tool Used: Cadence EDA tools for schematic and simulation

Β·         Technology Node:180nm CMOS process.

Β·         Design Elements: complementary compound push–pull pair (PMOS + NMOS), input matching network, L1 & L2 (0.5 pH–10 pH) inductors, high-value output load (RL, 100 kΩ–1 MΩ), biasing/level-shift network, feedback/compensation path, input/output coupling and decoupling capacitors, thermal-stabilization circuitry, and symmetric/layout considerations for reduced mismatch

Β·         Optimization Goal: minimize circuit complexity and parasitics (transistor and passive count) while preserving ultra-wideband large-signal gain, low output noise, high temperature stability, and linearity across the desired cutoff range (e.g., maintain cutoff from β‰ˆ18.21 kHz up to hundreds of GHz in simulation) with low power consumption (~69 mW)v

Learning Outcomes

Understanding of Memristor Technology

β€’ Knowledge of In-Memory Computing Architecture

β€’ Design of Approximate Adders

β€’ Trade-off Analysis Between Accuracy and Efficiency

β€’ Low-Power Nanoelectronic Circuit Design

β€’ Exposure to Emerging Computing Paradigms

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