This work presents the design of a memristor-based in-memory adaptive approximate adder aimed at achieving high energy efficiency and reduced computation latency for modern computing applications. With the limitations of conventional CMOS architectures, particularly the von Neumann bottleneck caused by separate memory and processing units, in-memory computing using memristors has emerged as a promising solution
Keywords
Memristor, In-Memory Computing, Approximate Adder, Low Power, Adaptive Design, Non-Volatile Memory, Nanoelectronics
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Β· Tool Used: Cadence EDA tools for schematic and simulation
Β· Technology Node:180nm CMOS process.
Β· Design Elements: complementary compound pushβpull pair (PMOS + NMOS), input matching network, L1 & L2 (0.5 pHβ10 pH) inductors, high-value output load (RL, 100 kβ¦β1 Mβ¦), biasing/level-shift network, feedback/compensation path, input/output coupling and decoupling capacitors, thermal-stabilization circuitry, and symmetric/layout considerations for reduced mismatch
Β· Optimization Goal: minimize circuit complexity and parasitics (transistor and passive count) while preserving ultra-wideband large-signal gain, low output noise, high temperature stability, and linearity across the desired cutoff range (e.g., maintain cutoff from β18.21 kHz up to hundreds of GHz in simulation) with low power consumption (~69 mW)v
Understanding of Memristor Technology
β’ Knowledge of In-Memory Computing Architecture
β’ Design of Approximate Adders
β’ Trade-off Analysis Between Accuracy and Efficiency
β’ Low-Power Nanoelectronic Circuit Design
β’ Exposure to Emerging Computing Paradigms