Paper PublishingA Benchmark of Cryo CMOS Embedded SRAM DRAMs in 40 nm CMOS
Objective
This work compares eight different dynamic and static memory cell designs, embedded in identical memory architectures in a nanometer CMOS process typically adopted for QC cryo-CMOS interfaces
Abstract
Power consumption is a critical consideration in the design of memory elements and digital systems within very large scale integration (VLSI) circuits. This study introduces a method for reducing power consumption in DRAM sense amplifiers, termed FSPA-VLSA (Foot Switch PMOS Access Voltage Latch Type Sense Amplifier). By implementing this technique within the open bit architecture of DRAM Cells during read operations, an approximate 81% reduction in overall power consumption has been achieved. Additionally, this proposed circuit offers advantages for low-power VLSI/ULSI design. The circuit has been successfully designed and implemented using Cadence Virtuoso tools at 45nm technology.
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Block Diagram
Specifications
Software Requirements:
· Tool: Cadence virtuoso
Hardware Requirements:
· Microsoft® Windows XP
· Intel® Pentium® 4 processor or Pentium 4 equivalent with SSE support
· 512 MB RAM
· 100 MB of available disk space
Learning Outcomes
- Introduction to Digital electronics
- Importance of Transistors
- MOS Fundamentals
- NMOS/PMOS/CMOS Technologies
- How to design circuits using Transistor logic?
- Scope of DRAM in today’s world
- Use of feedback signals.
- Applications in Real time.
- DRAM importance.
- Solution providing for real time problems
- Project Development Skills:
- Problem Analysis Skills
- Problem Solving Skills
- Logical Skills
- Designing Skills
- Testing Skills
- Debugging Skills
- Presentation skills
- Thesis Writing Skills
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