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Radiation-hardened 14t SRAM Bitcell With Speed And Power Optimized For Space Application

RADIATION-HARDENED 14T SRAM BITCELL WITH SPEED AND POWER OPTIMIZED FOR SPACE APPLICATION

  • Project Code :
  • TVREBE19_06
  • .
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RADIATION-HARDENED 14T SRAM BITCELL WITH SPEED AND POWER OPTIMIZED FOR SPACE APPLICATION

In this paper, a novel radiation-hardened 14-transistor SRAM bitcell with speed and power optimized [radiation-hardened with speed and power optimized (RSP)-14T] for space application is proposed. By circuit- and layout-level optimization design in a 65-nm CMOS technology, the 3-D TCAD mixed-mode simulation results show that the novel structure is provided with increased resilience to single-event upset as well as single-event-multiple-node upsets due to the charge sharing among OFF-transistors. Moreover, the HSPICE simulation results show that the write speed and power consumption of the proposed RSP-14T are improved by ~65% and ~50%, respectively, compared with those of the radiation hardened design (RHD)-12T memory cell.

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